Modeling of Negative Differential Resistance in Memristive Devices
Abstract
Our research group has been studying the electrical properties of the chalcogenide-based memristive devices that we have fabricated at Boise State in the Idaho Microfabrication Laboratory. We have developed a circuit model using LTSpice that builds off of an existing tunnel diode model [1]. Using this model as a starting point, we have modified the model in order to fit our experimental data. The device has a ‘memory’, in that the state that it is programmed to depends upon the previous state. Our next step is to try to incorporate this ‘memory’ effect into our device model. A reasonable device model will allow us to simulate circuit designs using this device technology.
This paper has been withdrawn.