We have fabricated two-terminal chalcogenide-based devices containing Ge2Se3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.
Oblea, Antonio S.; Timilsina, Achyut; Moore, David; and Campbell, Kristy A.. (2010). "Silver Chalcogenide Based Memristor Devices". 2010 International Joint Conference on Neural Networks (IJCNN), 1-3. http://dx.doi.org/10.1109/IJCNN.2010.5596775