Document Type
Conference Proceeding
Publication Date
10-14-2010
Abstract
We have fabricated two-terminal chalcogenide-based devices containing Ge2Se3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.
Publication Information
Oblea, Antonio S.; Timilsina, Achyut; Moore, David; and Campbell, Kristy A.. (2010). "Silver Chalcogenide Based Memristor Devices". 2010 International Joint Conference on Neural Networks (IJCNN), 1-3. http://dx.doi.org/10.1109/IJCNN.2010.5596775
Comments
©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. DOI: 10.1109/IJCNN.2010.5596775