A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order to speed up reliably the development process. Ideally, device models would accurately describe the characteristic device behavior and would be represented by single-valued equations without requiring the need for recursive or numerically intensive solutions. With this in mind, we have developed an empirical chalcogenide compact memristor model that accurately describes all regions of operations of memristor devices employing single-valued equations.
©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. DOI: 10.1109/NANOARCH.2010.5510936
Campbell, Kristy A.; Oblea, Antonio; and Timilsina, Achyut. (2010). "Compact Method for Modeling and Simulation of Memristor Devices: Ion Conductor Chalcogenide-Based Memristor Devices". 2010 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-4. http://dx.doi.org/10.1109/NANOARCH.2010.5510936