Document Type
Conference Proceeding
Publication Date
4-2008
Abstract
This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization[l], and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.
Publication Information
Cahoon, Curtis and Baker, R. Jacob. (2008). "Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References". IEEE Workshop on Microelectronics and Electron Devices, 16-19. http://dx.doi.org/10.1109/WMED.2008.4510657

Comments
This document was originally published by IEEE in IEEE Workshop on Microelectronics and Electron Devices. Copyright restrictions may apply. DOI: 10.1109/WMED.2008.4510657