Document Type
Conference Proceeding
Publication Date
8-2005
DOI
http://dx.doi.org/10.1109/MWSCAS.2005.1594470
Abstract
As semiconductor device geometries continue to shrink, the corresponding voltage applied across the processed devices must also be reduced. Therefore reference voltages used in integrated circuits will need to be reduced as well. A typical bandgap reference (BGR) voltage generator uses PN junction diodes or PNP BJT’s to bias the reference. The forward bias voltage of these devices is typically 0.7 volts, and has a limiting effect on how low a reference voltage can be generated, as well as how low a system voltage can be applied. Schottky, or metal-semiconductor (MS), diodes have a lower forward bias voltage, typically of about 0.3 volts. The implementation of Schottky metal-semiconductor diodes in place of PN diodes in the design of the BGR, should allow for lower reference voltage generation. This project consists of the design and simulation of a BGR utilizing MS diodes, followed by fabrication and validation of the design.
Copyright Statement
This document was originally published by IEEEin 48th Midwest Symposium on Circuits and Systems, 2005. Copyright restrictions may apply. DOI: 10.1109/MWSCAS.2005.1594470
Publication Information
Butler, David L. and Baker, R. Jacob. (2005). "Low-Voltage Bandgap Reference Design Utilizing Schottky Diodes". 48th Midwest Symposium on Circuits and Systems, 2005, 21794-1797.