TID Impact on Process Modified CBRAM Cells

Authors

M. Ailavajhala, Boise State University
M. Mitkova, Boise State UniversityFollow

Document Type

Article

Publication Date

2015

DOI

http://dx.doi.org/10.1109/RADECS.2015.7365685

Abstract

In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

Comments

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Publication Information

Ailavajhala, M. and Mitkova, M.. (2015). "TID Impact on Process Modified CBRAM Cells". 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), .