Document Type

Conference Proceeding

Publication Date

4-2005

Abstract

Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

Copyright Statement

This document was originally published by IEEE in IEEE Workshop on Microelectronics and Electron Devices, 2005. Copyright restrictions may apply. DOI: 10.1109/WMED.2005.1431630

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