Novel Slurry Solutions for Thick Cu CMP

Authors

Peter A. Miranda, Boise State UniversityFollow
Jerome A. Imonigie, Boise State UniversityFollow
Aaron L. Erbe, Boise State University
Amy J. Moll, Boise State UniversityFollow

Document Type

Conference Proceeding

Publication Date

4-2005

DOI

http://dx.doi.org/10.1109/WMED.2005.1431630

Abstract

Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

Copyright Statement

This document was originally published by IEEE in IEEE Workshop on Microelectronics and Electron Devices, 2005. Copyright restrictions may apply. DOI: 10.1109/WMED.2005.1431630

Publication Information

Miranda, Peter A.; Imonigie, Jerome A.; Erbe, Aaron L.; and Moll, Amy J.. (2005). "Novel Slurry Solutions for Thick Cu CMP". IEEE Workshop on Microelectronics and Electron Devices, 2005, 92-94.