"A Scalable I/O Architecture for Wide I/O DRAM" by Qawi Harvard and R. Jacob Baker
 

A Scalable I/O Architecture for Wide I/O DRAM

Document Type

Conference Proceeding

Publication Date

8-7-2011

DOI

http://dx.doi.org/10.1109/MWSCAS.2011.6026682

Abstract

A 4 Gb DRAM architecture utilizing a scalable number of data pins is proposed. The architecture does not impact chip size and does not require additional metal layers. The 4 Gb DRAM measure 68.88 mm2 and achieves an array efficiency of 59.9%. This was accomplished by using a split bank, edge I/O interface, central row, and central column structures. The architecture coincides with the chip size and array efficiency measurements predicted by the ITRS for a 40 nm 2012 production DRAM architecture.

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