Document Type

Conference Proceeding

Publication Date

4-22-2011

Abstract

Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

Copyright Statement

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. DOI: 10.1109/WMED.2011.5767271

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