Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications
Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, C.M., Microelectronics Journal 38, 52–59 (2007)). Here, we report the synthesis of (Ge40Se60)100−zMz alloys where M=Sn, In, Sb, and Zn, and the corresponding bulk material Raman spectra and differential scanning calorimetry data in order to explore material compositions that might be useful for producing a multi-state phase-change memory device.
Campbell, Kristy A.; Davis, Morgan G.; and Peloquin, Jeffrey M.. (2007). "Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications". Materials Research Society Symposium Proceedings, 997343-350.
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