Boise State University
This invention provides the structure and fabrication process of a completely planar, Damascene double gated transistor. The structure has a novel self-aligned, hyper-abrupt retrograde body and a zero-parasitic, endwall gate-body connection. The structure provides for increased density and enables ultra low power to be utilized. The methods also provide for simultaneously making both four-terminal and dynamic threshold MOSFET devices.
Parke, Stephen A., "Damascene Double Gated Transistors and Related Manufacturing Methods" (2003). Boise State Patents. 18.